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insulated gate bipolar transistor irgp4069pbf IRGP4069-EPBF
1 www.irf.com 10/02/09 v ces = 600v i c(nominal) = 35a t sc 5 s, t j(max) = 175c v ce(on) typ. = 1.6v g c e gate collector emitter to-247ac irgp4069pbf to-247ad IRGP4069-EPBF g c e c g c e c features low v ce (on) trench igbt technology low switching losses maximum junction temperature 175 c 5 s short circuit soa square rbsoa 100% of the parts tested for i lm positive v ce (on) temperature coefficient tight parameter distribution lead free package benefits high efficiency in a wide range of applications suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses rugged transient performance for increased reliability excellent current sharing in parallel operation e c g n-channel absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 76 i c @ t c = 100c continuous collector current 50 i nominal nominal current 35 i cm pulse collector current, v ge = 15v 105 a i lm clamped inductive load current, v ge = 20v 140 v ge continuous gate-to-emitter voltage 20 v transient gate-to-emitter voltage 30 p d @ t c = 25c maximum power dissipation 268 w p d @ t c = 100c maximum power dissipation 134 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc thermal resistance junction-to-case CCC CCC 0.56 c/w r cs thermal resistance, case-to-sink (flat, greased surface) CCC 0.24 CCC r ja thermal resistance, junction-to-ambient (typical socket mount) CCC CCC 40 downloaded from: http:///
irgp4069pbf/IRGP4069-EPBF 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, l = 19 h, r g = 10 . pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at t j of approximately 90c. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 6 0 0v v ge = 0v, i c = 100 a ? v (br)ces / ? t j temperature coeff. of breakdown voltage 1 . 3m v / c v ge = 0v, i c = 1ma (25c-175c) 1.6 1.85 i c = 35a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage 1.9 v i c = 35a, v ge = 15v, t j = 150c 2 . 0 i c = 35a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 6.5 v v ce = v ge , i c = 1.0ma ? v ge(th) / ? tj threshold voltage temp. coefficient -18 mv/c v ce = v ge , i c = 1.0ma (25c - 175c) gfe forward transconductance 25 s v ce = 50v, i c = 35a, pw = 60 s i ces collector-to-emitter leakage current 1.0 20 a v ge = 0v, v ce = 600v 770 v ge = 0v, v ce = 600v, t j = 175c i ges gate-to-emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) 69 104 i c = 35a q ge gate-to-emitter charge (turn-on) 18 27 nc v ge = 15v q gc gate-to-collector charge (turn-on) 29 44 v cc = 400v e on turn-on switching loss 390 508 i c = 35a, v cc = 400v, v ge = 15v e off turn-off switching loss 632 753 j r g = 10 , l = 200 h, l s = 150nh, t j = 25c e total total switching loss 1022 1261 energy losses include tail & diode reverse recovery t d(on) turn-on delay time 46 56 i c = 35a, v cc = 400v, v ge = 15v t r rise time 33 42 ns r g = 10 , l = 200 h, l s = 150nh, t j = 25c t d(off) turn-off delay time 105 117 t f fall time 44 54 e on turn-on switching loss 1013 i c = 35a, v cc = 400v, v ge =15v e off turn-off switching loss 929 j r g =10 , l=200 h, l s =150nh, t j = 175c e total total switching loss 1942 energy losses include tail & diode reverse recovery t d(on) turn-on delay time 43 i c = 35a, v cc = 400v, v ge = 15v t r rise time 35 ns r g = 10 , l = 200 h, l s = 150nh t d(off) turn-off delay time 127 t j = 175c t f fall time 61 c ies input capacitance 2113 pf v ge = 0v c oes output capacitance 197 v cc = 30v c res reverse transfer capacitance 65 f = 1.0mhz t j = 175c, i c = 140a rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v rg = 10 , v ge = +20v to 0v scsoa short circuit safe operating area 5 s v cc = 400v, vp =600v rg = 10 , v ge = +15v to 0v conditions downloaded from: http:///
irgp4069pbf/IRGP4069-EPBF www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j 175c; v ge =15v fig. 4 - reverse bias soa t j = 175c; v ge =20v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 60 s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 60 s 25 50 75 100 125 150 175 t c (c) 0 10 20 30 40 50 60 70 80 i c ( a ) 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 300 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10 sec 100 sec tc = 25c tj = 175c single pulse dc 1msec downloaded from: http:///
irgp4069pbf/IRGP4069-EPBF 4 www.irf.com fig. 7 - typ. igbt output characteristics t j = 175c; tp = 60 s fig. 9 - typical v ce vs. v ge t j = 25c fig. 10 - typical v ce vs. v ge t j = 175c fig. 11 - typ. transfer characteristics v ce = 50v; tp = 60 s fig. 8 - typical v ce vs. v ge t j = -40c 0 2 4 6 8 10 v ce (v) 0 20 40 60 80 100 120 140 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 5 1 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 18a i ce = 35a i ce = 70a 5 1 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 18a i ce = 35a i ce = 70a 5 1 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 18a i ce = 35a i ce = 70a 4 5 6 7 8 9 10 11 12 13 14 v ge, gate-to-emitter voltage (v) 0 20 40 60 80 100 120 140 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 175c t j = 25c fig. 12 - typ. energy loss vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ; v ge = 15v 0 10203040506070 i c (a) 0 500 1000 1500 2000 2500 3000 3500 4000 e n e r g y ( j ) e off e on downloaded from: http:///
irgp4069pbf/IRGP4069-EPBF www.irf.com 5 fig. 14 - typ. energy loss vs. r g t j = 175c; l = 210 h; v ce = 400v, i ce = 35a; v ge = 15v fig. 15 - typ. switching time vs. r g t j = 175c; l = 210 h; v ce = 400v, i ce = 35a; v ge = 15v 0 2 55 07 51 0 0 rg ( ) 500 1000 1500 2000 2500 3000 e n e r g y ( j ) e off e on 0 10 20 30 40 50 r g ( ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 16 - v ge vs. short circuit time v cc = 400v; t c = 25c 8 1 01 21 41 61 8 v ge (v) 0 5 10 15 20 t i m e ( s ) 0 75 150 225 300 c u r r e n t ( a ) t sc i sc fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig. 13 - typ. switching time vs. i c t j = 175c; l = 200 h; v ce = 400v, r g = 10 ; v ge = 15v 0 10 20 30 40 50 60 70 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on downloaded from: http:///
irgp4069pbf/IRGP4069-EPBF 6 www.irf.com fig. 18 - typical gate charge vs. v ge i ce = 35a; l = 740 h 0 10203040506070 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v fig 19. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.01041 0.0000060.15911 0.000142 0.23643 0.0020350.15465 0.013806 downloaded from: http:///
irgp4069pbf/IRGP4069-EPBF www.irf.com 7 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075 f d1 22k e force c force e sense fig.c.t.6 - bvces filter circuit fig.c.t.3 - s.c. soa circuit dc 4x dut vcc scsoa fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v downloaded from: http:///
irgp4069pbf/IRGP4069-EPBF 8 www.irf.com -100 0 100 200 300 400 500 600 6.4 6.6 6.8 7 7.2 time (s) v ce (v) -10 0 10 20 30 40 50 60 i ce (a) test current 90% test current 5% v ce 10% test current tr eon loss -100 0 100 200 300 400 500 600 -0.5 0 0.5 1 1.5 2 time(s) v ce (v) -10 0 10 20 30 40 50 60 i ce (a) 90% i ce 5% v ce 5% i ce eof f lo s s tf fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 -100 0 100 200 300 400 500 600 700 -4.5 0.5 5.5 10.5 time (us) vce (v) -50 0 50 100 150 200 250 300 350 i ce (a) vce ice fig. wf3 - typ. s.c. waveform @ t j = 25c using fig. ct.3 downloaded from: http:///
irgp4069pbf/IRGP4069-EPBF www.irf.com 9

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irgp4069pbf/IRGP4069-EPBF 10 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/09 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on irs web site.

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to-247ad package is not recommended for surface mount application.

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